Abstract:
Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple t...Show MoreMetadata
Abstract:
Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ~40 mV/V), nearly symmetric VTh, low Tinv (~1.4 nm), and high Ion (~780 ¿A/¿m) for N/PMOS without any intentional strain enhancement.
Published in: IEEE Transactions on Electron Devices ( Volume: 57, Issue: 3, March 2010)