I. Introduction
Metal-Induced Lateral Crystallization (MILC) thin-film transistors (TFTs) exhibit good electrical properties and can be used in systems on panel. In MILC, Ni islands are selectively deposited on top of an amorphous silicon (-Si) film and allowed to crystallize at a temperature below 600 °C [1], [2]. Unfortunately, poly-Si/oxide interfaces and poly-Si grain boundaries trap Ni and precipitates, thus increasing leakage current and shifting the threshold voltage [3]–[7]. This problem can be solved using a Ni-gettering method [8]. However, the crystal quality of Ni-gettering poly-Si films was poorer than that of conventional MILC poly-Si films.