Abstract:
We present a novel methodology to extract model parameters from measured S-parameter for silicon on-chip center-tapped differential spiral inductor. The double-π equivale...Show MoreMetadata
Abstract:
We present a novel methodology to extract model parameters from measured S-parameter for silicon on-chip center-tapped differential spiral inductor. The double-π equivalent circuit topology is employed in which conductor skin effect is considered. The extraction procedure based on Modified Differential Evolution is demonstrated to be efficient and effective. The excellent accuracy of the results demonstrates the flexibility of the modeling methodology.
Date of Conference: 20-22 December 2007
Date Added to IEEE Xplore: 12 February 2008
ISBN Information: