Abstract:
Lifetime of pMOSFETs is limited by negative bias temperature instability (NBTI). For the first time, we show that the NBTI-induced threshold voltage shift, DeltaVth, meas...Show MoreMetadata
Abstract:
Lifetime of pMOSFETs is limited by negative bias temperature instability (NBTI). For the first time, we show that the NBTI-induced threshold voltage shift, DeltaVth, measured in early works by using either the 'on-the-fly' or the conventional transfer characteristics extrapolation techniques is not the real DeltaVth under practical operation. A new method is proposed for estimating the real DeltaVth.
Published in: 2007 IEEE International Electron Devices Meeting
Date of Conference: 10-12 December 2007
Date Added to IEEE Xplore: 04 January 2008
ISBN Information:
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