Abstract:
An ultra-thin phase-change bridge (PCB) memory cell, implemented with doped GeSb, is shown with < 100muA RESET current. The device concept provides for simplified scaling...Show MoreMetadata
Abstract:
An ultra-thin phase-change bridge (PCB) memory cell, implemented with doped GeSb, is shown with < 100muA RESET current. The device concept provides for simplified scaling to small cross-sectional area (60nm2) through ultra-thin (3nm) films; the doped GeSb phase-change material offers the potential for both fast crystallization and good data retention
Published in: 2006 International Electron Devices Meeting
Date of Conference: 11-13 December 2006
Date Added to IEEE Xplore: 16 April 2007
ISBN Information:
Contents 