Relationship between Intrinsic Breakdown Field and Bandgap of Materials | IEEE Conference Publication | IEEE Xplore

Relationship between Intrinsic Breakdown Field and Bandgap of Materials


Abstract:

A universal expression for the relationship between intrinsic breakdown field and bandgap of both semiconductors and insulators is proposed, and a quantitative criterion ...Show More

Abstract:

A universal expression for the relationship between intrinsic breakdown field and bandgap of both semiconductors and insulators is proposed, and a quantitative criterion for distinguishing between semiconductors and insulators is introduced for the first time
Date of Conference: 14-17 May 2006
Date Added to IEEE Xplore: 10 July 2006
Print ISBN:1-4244-0117-8
Conference Location: Belgrade, Serbia

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