Abstract:
A 30V trench lateral power MOSFET (TLPM) has been successfully integrated with a 0.6/spl mu/m smart power technology based on an existing Bi-CDMOS process. A specific on-...Show MoreMetadata
Abstract:
A 30V trench lateral power MOSFET (TLPM) has been successfully integrated with a 0.6/spl mu/m smart power technology based on an existing Bi-CDMOS process. A specific on-resistance of 16m/spl Omega/-mm/sup 2/ has been realized for the TLPM with a breakdown voltage of 35V without significantly compromising the performance of other devices in the technology. This is the lowest specific on-resistance in this voltage range, obtained to date, for a lateral power MOSFET embedded with low voltage devices.
Published in: Digest. International Electron Devices Meeting,
Date of Conference: 08-11 December 2002
Date Added to IEEE Xplore: 06 February 2003
Print ISBN:0-7803-7462-2
Contents 