Displacement Damage Effects on a CDTI-based CCD-on-CMOS: Dark Current and Charge Transfer Inefficiency

Displacement Damage effects induced by proton and neutron irradiation are explored in a capacitive deep trench CCD-on-CMOS image sensor. Dark current and charge transfer inefficiency are investigated to exhibit respectively the generation and capture-emission mechanisms arising with defect clusters and point defects introduction. This paper reports the trends in damage factor, trap production rate, trap cross-section, and energy distribution with respect to particle fluence and annealing. Charge transfer inefficiency mitigation techniques based on the temperature and clocking of operation are discussed.