Highly Reliable Nanoelectrothermal Non-Volatile Memory with CMOS-level Voltage and Low On-State Resistance | IEEE Conference Publication | IEEE Xplore

Highly Reliable Nanoelectrothermal Non-Volatile Memory with CMOS-level Voltage and Low On-State Resistance


Abstract:

This paper reports a highly reliable nanoelectrothermal non-volatile memory (NET-NVM) with complementary metal-oxide-semiconductor (CMOS)-level voltage and low on-state r...Show More

Abstract:

This paper reports a highly reliable nanoelectrothermal non-volatile memory (NET-NVM) with complementary metal-oxide-semiconductor (CMOS)-level voltage and low on-state resistance. To overcome the performance limitations of the conventional nanoelectromechanical non-volatile memory (NEM-NVM), we introduced an electrothermal actuation method capable of generating a high contact force at a low voltage. Additionally, an out-of-plane electrode structure was utilized to achieve a low on-state resistance. As a result, the fabricated NET-NVM exhibited outstanding performance, including high reliability as well as CMOS-level voltage and low on-state resistance. This achievement opens new possibilities for NET-NVM in future advanced computing systems.
Date of Conference: 21-25 January 2024
Date Added to IEEE Xplore: 22 February 2024
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Conference Location: Austin, TX, USA

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