Tunneling Leakage Current Dependent RDD Model Framework for Gate Oxide TDDB

The Reaction Diffusion Drift (RDD) model is used to simulate trap generation (ΔNTG) kinetics during Time Dependent Dielectric Breakdown (TDDB) experiments. Several features of measured data, e.g., stress gate voltage (VG) dependence of mean time to breakdown (TBD) across temperature (T) and gate oxide thickness (Tox), Weibull slope (β) across Tox are explained. The role of electron (JE) and/ or hole (JH) leakage current (with JH from Anode Hole Injection or AHI) is explored as a trigger for RDD model. The polarity gap between positive and negative VG stress is addressed.