300 GHz On-Chip Horn Antenna with WR-03 to SIW Transition Using Integrated Passive Device

In this paper, an on-chip H-plane horn antenna operating at 300 GHz is proposed and simulated. The antenna is realized on the integrated passive device (IPD) process, fed from a WR03-to-substrate integrated waveguide (SIW) transition. The transition comprises a stepped waveguide section, a coupling aperture, and a substrate integrated waveguide section. The integrated passive device (IPD) process selects the intrinsic Gallium arsenide (GaAs) as the carrier substrate. The chip is integrated with an aluminum split-block for measurement purpose using a standard WR-03 waveguide. The simulated Sparameter reveals a reflection coefficient of -12.4 dB at 300 GHz. The antenna achieves a realized gain of 6.4 dBi and a radiation efficiency of 62%. The aluminum housing significantly suppresses the broadside/back radiation and fulfills the desired end-fire pattern with front to back ratio of 11.5 dB.