Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures | IEEE Journals & Magazine | IEEE Xplore

Charge-Based Flicker Noise Modeling of GaN HEMTs Down to Cryogenic Temperatures


Abstract:

In this letter, we present a charge-based model to describe the flicker/low-frequency noise behavior in GaN HEMTs. We study flicker noise and introduce the model for freq...Show More

Abstract:

In this letter, we present a charge-based model to describe the flicker/low-frequency noise behavior in GaN HEMTs. We study flicker noise and introduce the model for frequencies ranging from 10Hz to 10KHz across a wide temperature range (300K to 4.2K). While noise models for GaN HEMTs have been reported previously, including the state-of-the-art ASM HEMT model, an accurate model accounting for the significant gate bias dependence of flicker noise as it approaches the sub-threshold region is still missing. To address this need, we incorporate a separate sub-threshold region noise component. The proposed model effectively captures the flicker noise associated with an AlGaN/GaN HEMT device from sub-threshold to above-threshold, down to cryogenic temperatures, and the same has been validated against experimental data.
Published in: IEEE Electron Device Letters ( Volume: 44, Issue: 9, September 2023)
Page(s): 1416 - 1419
Date of Publication: 12 July 2023

ISSN Information:

Funding Agency:


Contact IEEE to Subscribe

References

References is not available for this document.