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Universal PBTI Relaxation on the Negative VTH Shift in Oxide Semiconductor Transistors and New Insights | IEEE Journals & Magazine | IEEE Xplore

Universal PBTI Relaxation on the Negative VTH Shift in Oxide Semiconductor Transistors and New Insights


Abstract:

In this work, the positive bias temperature instability (PBTI) degradation of ZnO transistors by atomic layer deposition (ALD) is systematically investigated by using an ...Show More

Abstract:

In this work, the positive bias temperature instability (PBTI) degradation of ZnO transistors by atomic layer deposition (ALD) is systematically investigated by using an extended measure-stress-measure (eMSM) technique. We observe for the first time the anomalous negative threshold voltage ( {V} _{\textit {TH}} ) shift under PBTI stress, which is frequently observed in oxide semiconductor transistors, can be well described by a universal relaxation model. The permanent component ( {P} ) and recoverable component ( {R} ) are simultaneously extracted, clearly showing that the {R} component is dominated by negative {V} _{\textit {TH}} shift while {P} component is positive. The universality of PBTI relaxation on the negative {V} _{\textit {TH}} shift in oxide semiconductors suggests hydrogen (H) transport may play a key role on understanding PBTI degradation phenomenon in oxide semiconductor devices, and relaxation must be considered for accurate evaluation of lifetime.
Published in: IEEE Electron Device Letters ( Volume: 44, Issue: 7, July 2023)
Page(s): 1136 - 1139
Date of Publication: 10 May 2023

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