Abstract:
Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2- and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS tec...Show MoreMetadata
Abstract:
Effects of programming/erasing (P/E) and total-ionizing dose (TID) are investigated on 2- and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in programed devices does not significantly affect 1/ {f} noise magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap energy and spatial distributions. TID irradiation activates a large number of stable radiation-induced traps.
Published in: IEEE Transactions on Electron Devices ( Volume: 70, Issue: 6, June 2023)