I. Introduction
A crucial step in the production of Integrated Circuits (ICs) is the projection of the pattern of electronic connections on a silicon wafer coated with a photoresist. The light source used to project the pattern on the wafer causes the wafer to heat up and expand, which leads to a deteriorated imaging quality. With the critical dimensions of the projected pattern approaching the subnanometer range, wafer heating has become a determining factor for the quality of the produced ICs (see e.g. [1]–[3]).