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Sub 100 nW Volatile Nano-Metal-Oxide Memristor as Synaptic-Like Encoder of Neuronal Spikes | IEEE Journals & Magazine | IEEE Xplore

Sub 100 nW Volatile Nano-Metal-Oxide Memristor as Synaptic-Like Encoder of Neuronal Spikes


Abstract:

Advanced neural interfaces mediate a bioelectronic link between the nervous system and microelectronic devices, bearing great potential as innovative therapy for various ...Show More

Abstract:

Advanced neural interfaces mediate a bioelectronic link between the nervous system and microelectronic devices, bearing great potential as innovative therapy for various diseases. Spikes from a large number of neurons are recorded leading to creation of big data that require online processing under most stringent conditions, such as minimal power dissipation and on-chip space occupancy. Here, we present a new concept where the inherent volatile properties of a nano-scale memristive device are used to detect and compress information on neural spikes as recorded by a multielectrode array. Simultaneously, and similarly to a biological synapse, information on spike amplitude and frequency is transduced in metastable resistive state transitions of the device, which is inherently capable of self-resetting and of continuous encoding of spiking activity. Furthermore, operating the memristor in a very high resistive state range reduces its average in-operando power dissipation to less than 100 nW, demonstrating the potential to build highly scalable, yet energy-efficient on-node processors for advanced neural interfaces.
Published in: IEEE Transactions on Biomedical Circuits and Systems ( Volume: 12, Issue: 2, April 2018)
Page(s): 351 - 359
Date of Publication: 01 March 2018

ISSN Information:

PubMed ID: 29570062

Funding Agency:


References

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