Abstract:
Oxygen Insertion (OI) to enhance MOSFET performance has been demonstrated previously. We expand the analysis of OI to determine the impact of Negative Bias Temperature In...Show MoreMetadata
Abstract:
Oxygen Insertion (OI) to enhance MOSFET performance has been demonstrated previously. We expand the analysis of OI to determine the impact of Negative Bias Temperature Instability (NBTI), and examine its effect on an optimized SRAM cell.
Date of Conference: 28 February 2017 - 02 March 2017
Date Added to IEEE Xplore: 15 June 2017
ISBN Information:
Contents 