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Low insertion loss 60 GHz CMOS H-shaped resonator BPF | IEEE Conference Publication | IEEE Xplore

Low insertion loss 60 GHz CMOS H-shaped resonator BPF


Abstract:

This paper presents a low insertion less 60 GHz on-chip bandpass filter (BPF) on 0.18 μm standard CMOS technology. For insertion loss minimization, this BPF uses the H-sh...Show More

Abstract:

This paper presents a low insertion less 60 GHz on-chip bandpass filter (BPF) on 0.18 μm standard CMOS technology. For insertion loss minimization, this BPF uses the H-shaped resonator which couples through two branches and the rectangular defected ground structures (DGS) which reduce the external quality factor. Besides, this BPF employs metal-insulator-metal capacitor to ensure size compactness. The fabricated BPF chip size is 240 μm × 650 μm. The simulation results agree well with the measured ones. The measured insertion loss is 2.1 dB at 60GHz.
Date of Conference: 15-18 January 2017
Date Added to IEEE Xplore: 27 March 2017
ISBN Information:
Electronic ISSN: 2164-2974
Conference Location: Phoenix, AZ, USA

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