Single gate based different structures of OTFTs: Prospective and challenges

Organic thin film transistor based devices are rapidly emerging technology trend in the area of electronics components design and becoming popular area of research in last decades. This is due to their potential of flexible electronics applications, ease of fabrication and low cost in designing of mainly various flexible electronics devices and circuits. This paper focuses towards the performance analysis of single gate-organic-thin-film transistors (OTFTs) on the basis of various performance parameters that is based on advanced OTFT structures in accord with used organic-semiconductor (OSC) materials in individual layers of OTFT. The OSC materials such as pentacene, P3HT, P3OT and many more are used as active layers in fabrication of OTFTs. The major challenges associated with the available OTFT technology nodes are the enhancement of their performance parameters such as subthreshold slope, on-off current ratio, mobility, voltage swing and noise margin to design and fabricate high speed organic circuits along with high reliability and robustness.