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Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels | IEEE Conference Publication | IEEE Xplore
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Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels

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E. Bury; B. Kaczer; D. Linten; L. Witters; H. Mertens; N. Waldron
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Abstract:

The self-heating (SH) effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility d...Show More

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Abstract:

The self-heating (SH) effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility devices, with multiple processing options. Considerations for managing SH in future technologies are provided.
Published in: 2016 IEEE International Electron Devices Meeting (IEDM)
Date of Conference: 03-07 December 2016
Date Added to IEEE Xplore: 02 February 2017
ISBN Information:
Electronic ISSN: 2156-017X
DOI: 10.1109/IEDM.2016.7838425
Conference Location: San Francisco, CA, USA
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