Full-band simulations of single-particle resonant tunneling in transition metal dichalcogenide-based interlayer tunneling field-effect transistors

We model and simulate the resonant tunneling and I-V characteristics of Interlayer Tunneling Field-Effect Transistors (ITFETs) based on transition metal dichalcogenide monolayers, MoS₂ layers here, using quantum transport simulations with a full-band model. Gate-controllable resonant peaks are demonstrated and the short channel effects on resonance broadening are studied.