Abstract:
Retention characteristics of a 3-D NAND flash cell with tube-type poly-Si body are investigated at a high temperature (T) depending on program (P), neutral (N), and erase...Show MoreMetadata
Abstract:
Retention characteristics of a 3-D NAND flash cell with tube-type poly-Si body are investigated at a high temperature (T) depending on program (P), neutral (N), and erase (E) states of adjacent cells. The trap density (Nt) in the nitride storage layer of the cell is extracted by utilizing retention model and deriving related equations in cylindrical coordinate. By programming or erasing adjacent cells, we can separate laterally distributed charge component from the retention characteristics. The adjacent cells which are programmed suppress significantly the lateral diffusion at a high T so that we can extract accurate Nt profile. Extracted peak of Nt at P-P-P mode is ~1.2×1019 cm-3eV-1 at an EC-ET of 1.0 eV. Retention characteristics with effective gate length and word-line biasing are also investigated.
Published in: 2015 Symposium on VLSI Technology (VLSI Technology)
Date of Conference: 16-18 June 2015
Date Added to IEEE Xplore: 27 August 2015
Electronic ISBN:978-4-86348-501-3