Abstract:
Various new developments for array detectors based on Silicon Single-Photon Avalanche Diodes (SPADs) were reported. Improved Si-SPAD technologies brought higher detection...Show MoreMetadata
Abstract:
Various new developments for array detectors based on Silicon Single-Photon Avalanche Diodes (SPADs) were reported. Improved Si-SPAD technologies brought higher detection efficiency in the red wavelength range. Higher performance was attained with InGaAs/InP SPADs by employing fast circuit techniques and by monolithic resistor-detector integration. New InGaAs(P)/InP SPAD array detectors provide remarkable performance in the near-infrared range (NIR). Photon detection at longer wavelengths (up to 3.5 \mu \hbox{m}) was pursued with antimonide SPADs and Superconducting Single-Photon Detectors (SSPD).
Published in: IEEE Photonics Journal ( Volume: 3, Issue: 2, April 2011)