A fast method of parameter extraction for MOS transistors | IEEE Conference Publication | IEEE Xplore
Subscribe
ADVANCED SEARCH
Conferences >ESSDERC '90: 20th European So...

A fast method of parameter extraction for MOS transistors

PDF
P R Karlsson; K O Jeppson
All Authors

Abstract:

A fast method of parameter extraction using a limited number of data points is developed for the SPICE level 3 MOS transistor model. Analytical expressions or numerical e...Show More

Metadata

Abstract:

A fast method of parameter extraction using a limited number of data points is developed for the SPICE level 3 MOS transistor model. Analytical expressions or numerical equations that converge fast are used to calculate the parameters and all interactions between parameters are taken into account. Proper selection of data points ensures physically reasonable values for most extracted parameters.
Published in: ESSDERC '90: 20th European Solid State Device Research Conference
Date of Conference: 10-13 September 1990
Date Added to IEEE Xplore: 22 March 2010
Print ISBN:0-7503-0065-5
Conference Location: Nottingham, UK

Contact IEEE to Subscribe

References

References is not available for this document.

IEEE Account

Purchase Details

Profile Information

Need Help?

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.