Superlattice and Negative Differential Conductivity in Semiconductors | IBM Journals & Magazine | IEEE Xplore

Scheduled Maintenance: On Tuesday, May 20, IEEE Xplore will undergo scheduled maintenance from 1:00-5:00 PM ET (6:00-10:00 PM UTC). During this time, there may be intermittent impact on performance. We apologize for any inconvenience.

Superlattice and Negative Differential Conductivity in Semiconductors


Abstract:

We consider a one-dimensional periodic potential, or “superlattice,” in monocrystalline semiconductors formed by a periodic variation of alloy composition or of impurity ...Show More

Abstract:

We consider a one-dimensional periodic potential, or “superlattice,” in monocrystalline semiconductors formed by a periodic variation of alloy composition or of impurity density introduced during epitaxial growth. If the period of a superlattice, of the order of 100 Å, is shorter than the electron mean free path, a series of narrow allowed and forbidden bands is expected due to the subdivision of the Brillouin zone into a series of minizones. If the scattering time of electrons meets a threshold condition, the combined effect of the narrow energy band and the narrow wave-vector zone makes it possible for electrons to be excited with moderate electric fields to an energy and momentum beyond an inflection point in the E-k relation; this results in a negative differential conductance in the direction of the superlattice. The study of superlattices and observations of quantum mechanical effects on a new physical scale may provide a valuable area of investigation in the field of semiconductors.
Published in: IBM Journal of Research and Development ( Volume: 14, Issue: 1, January 1970)
Page(s): 61 - 65
Date of Publication: January 1970

ISSN Information:


Contact IEEE to Subscribe