Simulation of the influence of grain structure of heteroepitaxial nitrides layers on the performance of MSM detector | IEEE Conference Publication | IEEE Xplore
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Simulation of the influence of grain structure of heteroepitaxial nitrides layers on the performance of MSM detector

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Adam Szyszka; Bogdan Paszkiewicz; Regina Paszkiewicz; Marek Tlaczala
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Abstract:

The influence of potential barriers formed at grain boundaries in heteroepitaxial nitrides layers on MSM (metal-semiconductor-metal) detector performance was simulated. T...Show More

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Abstract:

The influence of potential barriers formed at grain boundaries in heteroepitaxial nitrides layers on MSM (metal-semiconductor-metal) detector performance was simulated. Three types of structures: without deep traps, with point deep traps and with deep traps located in grain boundary (GB) were examined and compared. The time response characteristics of structures have been characterized.
Published in: 2007 International Students and Young Scientists Workshop on Photonics and Microsystems
Date of Conference: 08-10 July 2007
Date Added to IEEE Xplore: 09 July 2008
ISBN Information:
Print ISSN: 1939-4381
DOI: 10.1109/STYSW.2007.4559130
Conference Location: Dresden, Germany
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