Recrystallized parylene as a mask for silicon chemical etching

This paper presents the first use of recrystallized parylene as masking material for silicon chemical etch. Recrystallized parylene was obtained by melting parylene C at 350°C for 2 hours. The masking ability of recrystallized parylene was tested in HNA (hydrofluoric acid, nitric acid and acetic acid) solution of various ratios, KOH (potassium hydroxide) solution and TMAH (tetramethylammonium hydroxide) at different temperatures and concentrations. It is found that interface between parylene and the substrate can be attacked, which results in undercuts. Otherwise, recrystallized parylene exhibited good adhesion to silicon, complete protection of unexposed silicon and silicon etching rates comparable to literature data.