Abstract:
Electric field distribution in the channel and breakdown characteristics of an AlGaN/GaN HEMT with a source-connected field plate (SC-FP) were investigated using a two-di...Show MoreMetadata
Abstract:
Electric field distribution in the channel and breakdown characteristics of an AlGaN/GaN HEMT with a source-connected field plate (SC-FP) were investigated using a two-dimensional device simulation. The analysis of electric field distribution and breakdown voltage varying with the changes of the insulator thickness t and the field plate length LFP revealed that to maximize the breakdown voltage, t has to be increased to make the peak electric field at drain side of gate edge approaching breakdown electric field and LFP be long enough to prevent the high-field region at gate edge and that nearby FP edge from overlapping. For the simulated device, optimum t is about 0.2mum and LFP around 2.2mum, from which a breakdown voltage 365V was obtained
Published in: 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
Date of Conference: 23-26 October 2006
Date Added to IEEE Xplore: 23 April 2007
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