Monte-Carlo modelling of a MISFET/SOI struck by an energetic heavy ion

Presents a particle Monte-Carlo simulation of the behavior of a depletion MISFET/SOI struck by an energetic heavy ion. The transistor was either in the OFF-state or in the ON-state. The effect of the heavy ion was modelled by the generation of electron-hole pairs with an energy of 1 eV for each carrier and the authors studied how the device recovers its stationary regime. The effect of the ion on the transistor behavior was determined by the minority carriers behavior (the holes). For the transistor in the OFF-state, after temporary drain and source currents (during 50 ps), some holes remained 'trapped' in the potential well (for the holes) located in the channel near the gate insulator. So the channel was open and the transistor was in the ON-state. Return to the stationary could be achieved by recombination phenomena. For the transistor in the ON-state, the authors had only a temporary increase of the drain and source currents because all the generated holes was collected by the source region. After 100 ps, the transistor returned to its stationary regime.<>