Abstract:
A novel drift region engineered stepped-drift LDMOSFET device in Freescale's 0.25mum smart power technology is reported for the first time. The specific on-resistance of ...Show MoreMetadata
Abstract:
A novel drift region engineered stepped-drift LDMOSFET device in Freescale's 0.25mum smart power technology is reported for the first time. The specific on-resistance of the device is 0.33 mOmegamiddotcm2 at breakdown voltage of 59 V, the best reported data to date. SOA of the device has been improved up to 87% compared to its conventional counterpart
Date of Conference: 04-08 June 2006
Date Added to IEEE Xplore: 07 August 2006
Print ISBN:0-7803-9714-2
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