Abstract:
Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga0.85In0.15N0.011As0.989epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislo...Show MoreMetadata
Abstract:
Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga0.85In0.15N0.011As0.989epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.2μm.
Published in: 2005 Pacific Rim Conference on Lasers & Electro-Optics
Date of Conference: 14-14 July 2005
Date Added to IEEE Xplore: 10 January 2006
Print ISBN:0-7803-9242-6
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