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A Deep Insight Into the Ionizing Radiation Effects and Mechanisms on the Dynamic Characteristics of SiC MOSFETs | IEEE Journals & Magazine | IEEE Xplore

A Deep Insight Into the Ionizing Radiation Effects and Mechanisms on the Dynamic Characteristics of SiC MOSFETs


Abstract:

The robustness of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) under harsh environments is a crucial factor to ensure power conversion...Show More

Abstract:

The robustness of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) under harsh environments is a crucial factor to ensure power conversion system safely and continuously operating. In this work, the degradation behaviors and mechanisms of switching characteristics after gamma-ray radiation were comprehensively investigated, presenting the link of atomic-scale defects to device properties behaviors. The changes in turn-on and turn-off characteristics after irradiation are recorded and first analyzed in terms of the capacitance and static parameters characterizations. The decrease of the threshold voltage ( {V}_{\text {th}} ) plays a dominant role in the accelerated turn-on and delayed turn-off processes over the capacitance {C}_{\text {GS}} . The trapped interface and oxide charge in SiC MOSFETs as a function of radiation dose are separated from the subthreshold characteristics, which are suggested to result in the {V}_{\text {th}} shifts and {C}_{\text {GS}} changes. Deep-level transient spectroscopy measurements were performed to investigate the involved interface defects during irradiation. It is suggested that the oxygen vacancy in the oxide and SiC/SiO2 interface defects locating from {E}_{\text {C}} -0.2 to {E}_{\text {C}} -0.6 eV act as hole and electron trapping centers during irradiation, respectively, and thus lead to the degradations of switching performances of SiC MOSFETs.
Published in: IEEE Transactions on Electron Devices ( Volume: 71, Issue: 2, February 2024)
Page(s): 1145 - 1152
Date of Publication: 19 December 2023

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