An accurate analytical model of the AlGaAs/GaAs high electron mobility transistor (HEMT)

A new and accurate analytical model for the AlGaAs/GaAs high electron mobility transistor (HEMT) or MODFET is presented. This model uses a polynomial expression to model the dependence of sheet carrier concentration (n/sub 2/) in the two-dimensional electron gas on gate voltage (V/sub G/). It takes into account parasitic conduction in the AlGaAs layer by including a MESFET operation. It also includes the effects of the extrinsic source and drain resistances. Based on this model, analytical drain current-voltage equations suitable for computer simulation are derived. Calculated results show excellent agreement with measured characteristics, much closer than previous other models.