Performance and reliability of high power, high brightness 8xx-9xx nm semiconductor laser diodes

High-power and high-reliability single emitter laser diodes with 8xx-9xx nm lasing wavelength based on Asymmetric Decoupled Confinement Heterostructure (ADCH) are demonstrated. Laser structure optimization in vertical layer design and stripe width enabled high power operation of 9xx nm LDs up to 15-17 W range with high reliability. Possibility of further improvement in high power operation is also discussed.