Correlation of frequency, temperature, and bias stability of a Si ring gyro

It is well known that the rate bias sensitivity to temperature is one of the principal sources of error for MEMS gyros. Frequency locking the gyro resonant frequency to a reference clock using local, low time constant, ovenization as a feedback mechanism has been proposed as a method to greatly improve the stability of gyros under dynamical thermal changes. In order to assess how effective such methods might be, we have investigated the correlation between the resonant frequency, the temperature, and the bias stability of a first generation high-aspect-ratio Si disc resonator gyro which was vacuum sealed in a LCC package. Correlations to thermal fluctuations near 1 mK were studied.