A New Double Input-Double Output Complex Envelope Amplifier Behavioral Model Taking Into Account Source and Load Mismatch Effects

This paper presents a double input-double output bilateral low-pass equivalent amplifier behavioral model that takes into account input source and output load termination mismatches. The model is intended for the system-level simulation of amplifier chains subjected to wideband modulated signals, since it can predict the device's input and output scattered waves and their memory effects, in a wide range of voltage standing wave ratios (VSWR). In addition, the model extraction methodology, and its associated laboratory test bench are discussed, noting the limitations of conventional setups for behavioral model extraction and validation. The model is validated comparing the predicted and measured data of a real 15 W GaN based PA circuit attached to different loads. The obtained results show that, in terms of normalized mean square error, this model can provide -30 dB for VSWR in comparison to a much poorer performance of the conventional single input-single output model.