Investigation of SOI SCR triggering and current sustaining under DC and TLP conditions

We present DC and TLP data of four-terminal SCR devices and a diode-triggered SCR from an advanced SOI CMOS technology. Data analysis concludes that the triggering of an actively triggered SCR is related only to the current gain of each individual bipolar transistor, not the current gain product. Successful current sustaining of the SCR depends on the base resistance of its passively triggered bipolar transistor.