175,000 device-hours operation of AlGaN/GaN HEMTs on diamond at 200°C channel temperature

Hundred and seventy-five thousand device-hours of operating life at channel temperatures above 200°C is demonstrated on AlGaN/GaN HEMTs fabricated using GaN-on-diamond technology for the first time. No catastrophic failures and no drain-current drift larger than 10% from turning the devices on were recorded throughout this two-year DC test.