Random telegraph noise induced drain-current fluctuation during dynamic gate bias in Si MOSFETs

The influence of random telegraph noise (RTN) in MOSFETs on drain current (I
_d
) during transition edge of pulse gate voltage (V
_g
) was investigated. The I
_d
fluctuation under dynamic V
_g
was larger than that under de bias by a factor of 2.2. We have revealed that the initial trap occupation states before varying V
_g
significantly affect the I
_d
values during the transition edge of dynamic V
_g
. The trap occupation states were governed by the initial time and the profiles of RTN, e.g., the distribution of time constant (τ
_c
and τ
_e
). The I
_d
fluctuation under dynamic V
_g
can be controlled according to the profiles of RTN. These results provide useful information for designing an ultra-high speed circuit.