Rough surface improved formation-free low power resistive switching memory using IrOx/GdOx/W structure

Promising resistive switching memory characteristics in a IrO
_x
/GdO
_x
/W structure have been investigated. The surface roughness of bottom electrode plays a major role for forming-free and low current resistive switching, due to electric field enhancement. Memory device shows repeatable switching cycles with a small compliance current of 20 μA (60μW), long program/erase endurance of >10
⁴
cycles, and excellent data retention of >10
⁴
s at 85°C.