Improved resistive switching memory performance using novel W/TaOx/TiOxN/TiN structure

Improved resistive switching memory characteristics in a novel W/TaO
_x
/TiO
_x
N/TiN device with a small current compliance of 50 μA have been investigated. Memory device has shown consecutive repeatable resistive switching cycles (>10
²
) with small operation voltage of ±1.5V. The device with TaO
_x
/TiO
_x
N shows improved resistance ratio of ~40 as compared to TiO
_x
N device (~7). The switching mechanism is attributed to the formation/dissolution of O
_x
ygen vacancy filament. The memory device has shown good read endurance of >7.5×10
⁵
cycles and excellent data retention of >5 hours at 85°C.