Ultra-low-power switching and complementary resistive switching RRAM by single-stack metal-oxide dielectric

This paper reports a metal-oxide RRAM with novel Defect Engineering Technology (DET) that achieves forming-free, multi-level capable, self-rectifying, large 2×10
⁴
resistance window, ultra-low 0.24nW reset power and good endurance of 10p
⁶
cycles at the same time. Besides, by the same DET with additional forming process, we demonstrate a complementary resistive switching (CRS) on single-stack metal-oxide with large 15X resistance window, good endurance of 10
⁵
cycles and stable high-temperature disturbance.