Signal integrity modeling and measurement of TSV in 3D IC

In order to guarantee signal integrity of a TSV-based channel in 3D IC design, the modeling and measurements are conducted for electrical characterization of the TSV-based channel including TSVs and RDLs with various performance metrics such as insertion loss, noise coupling and eye diagrams. Based on the modeling and measurements of the fabricated TSV channels, design guide for the signal integrity of the channel is proposed.