A Light-Impact Model for p-Type and n-Type Poly-Si TFTs

This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (I
_d
) over the dark current (I
_dark
) is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the V
_ds
and V
_gs
voltages and of light intensities.