Excellent passivation structure of high efficiency multicrystalline silicon solar cells

The passivation effects for multicrystalline silicon solar cell with different configurations are investigated. Al
2
O
3
and SiO
2
films are used as the passivation layer in this work. They are prepared by atomic layer deposition and thermal oxidation, respectively. Using monolayer (Al
2
O
3
or SiO
2
) as the passivation layer, the cell efficiency is 16.33% and 17.41%, respectively. The excellent passivation structure shows the drastic enhancement in cell efficiency of 19.09%. The quantum efficiency results show the improvement in the IR range, which explains the high energy conversion efficiency for the excellent structure.