A Simple Method to Extract Source/Drain Series Resistance for Advanced MOSFETs

In this work, we developed a simple method for determining gate-bias dependent source and drain series resistances for advanced MOSFETs. Devices with gate lengths from 0.185 μm to 0.23 μm were measured and used to verify our theoretical derivation. Our result shows that the source/drain series resistance increases slightly then decreases moderately with gate bias. Simulation shows excellent agreement with the measurement. The improved method provides better efficiency and accuracy for modeling current-voltage characteristics of MOSFETs with LDD and pocket implants.