MD study of damage structures with poly-atomic boron cluster implantation

The MD simulations of B monomer and small cluster implantation were performed. The non-linear effect for implant range was observed when the incident energy is as low as few hundreds eV/atom, where the B
₁₀
or B
₁₈
cluster implantation gives deeper implantation energy and so higher implant efficiency of dopants than that of B monomer or dimer. For damage formation, cluster implantation caused large number of collisions at narrow surface region, which results in high-density amorphization of impact area. This amorphization effect was observed at both low and high energy cluster ion implantation, and is expected to reduce enhanced diffusion and show good annihilation process.