Effect of Fluorine Incorporation on 1/f Noise of HfSiON FETs for Future Mixed-Signal CMOS

An effect of fluorine incorporation into HfSiON on 1/f noise is shown for the first time. Fluorine effect on 1/f noise for SiON and HfSiON devices differ in that F does not improve the HfSiON N-FET 1/f noise. Apparently, the interface traps created by Hf close to the conduction band cannot be passivated by fluorine. For future analog/mixed-signal applications, HfSiON P-FET is expected to limit noise performance even though F can improve its noise.