Fabrication of μc-3C-SiC/c-Si Heterojunction Solar Cell by Hot Wire CVD System

N-type microcrystalline 3C-SiC:H films are deposited by hot wire chemical vapor deposition (HWCVD) at a low substrate temperature (~300degC). Heterojunction silicon based photovoltaic devices are fabricated by depositing wide band gap n-type muc-3C-SiC thin films on p-type Si wafer, whose thickness and resistivity are 200 mum and 1-10 Omega-cm respectively. The silicon wafers were textured by alkaline etchent prior to the device fabrication. The photovoltaic parameters of a typical device are found to be V
_oc
=560 mV, J
_sc
=35.0 mA/cm
²
, F.F.=0.724, eta=14.20%. Numerical analysis has been performed by using AFORS-HET, one dimensional device simulator to find out the probable cause of the change in device parameters before and after ageing of the filament