Diamond-MESFETs - synthesis and integration

We report the utilization of synthetic diamond grown by chemical-vapour-deposition (CVD) for use as metal-semiconductor field-effect-transistors (MESFETs). The lack of a shallow n-type donor means that diamond-based electronic devices are unipolar (p-type). The devices presented in this paper are based on delta-doping. Delta-doping stands for the use of very thin (<5 mm) highly doped (N
_A
10
²⁰
cm
^-3
) buried layers. This approach poses a huge challenge in terms of synthesis as well as processing. First successful attempts of fully integrating working delta-doped diamond MESFETs are presented